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型号	下载订购	功能描述	制造商上传企业	LOGO
CY7C1320CV18	文件：662.26 Kbytes Page：29 Pages	18-Mbit DDR-II SRAM 2-Word Burst Architecture Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr 文件：662.26 Kbytes 页数：29 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1320CV18	文件：1.24187 Mbytes Page：29 Pages	18-Mbit DDR II SRAM 2-Word Burst Architecture 文件：1.24187 Mbytes 页数：29 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1320CV18	文件：300 bytes Page：1 Pages	18-Mbit DDR-II SRAM 2-Word Burst Architecture	Infineon 英飞凌	Infineon
CY7C1320CV18-167BZC	文件：662.26 Kbytes Page：29 Pages	18-Mbit DDR-II SRAM 2-Word Burst Architecture Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr 文件：662.26 Kbytes 页数：29 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1320CV18-167BZI	文件：662.26 Kbytes Page：29 Pages	18-Mbit DDR-II SRAM 2-Word Burst Architecture Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr 文件：662.26 Kbytes 页数：29 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1320CV18-167BZXC	文件：662.26 Kbytes Page：29 Pages	18-Mbit DDR-II SRAM 2-Word Burst Architecture Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr 文件：662.26 Kbytes 页数：29 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1320CV18-167BZXI	文件：662.26 Kbytes Page：29 Pages	18-Mbit DDR-II SRAM 2-Word Burst Architecture Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr 文件：662.26 Kbytes 页数：29 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1320CV18-200BZC	文件：662.26 Kbytes Page：29 Pages	18-Mbit DDR-II SRAM 2-Word Burst Architecture Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr 文件：662.26 Kbytes 页数：29 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1320CV18-200BZI	文件：662.26 Kbytes Page：29 Pages	18-Mbit DDR-II SRAM 2-Word Burst Architecture Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr 文件：662.26 Kbytes 页数：29 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS
CY7C1320CV18-200BZXC	文件：662.26 Kbytes Page：29 Pages	18-Mbit DDR-II SRAM 2-Word Burst Architecture Functional Description The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and wr 文件：662.26 Kbytes 页数：29 Pages	CYPRESSCypress Semiconductor 赛普拉斯赛普拉斯半导体公司	CYPRESS

详细参数

型号：
CY7C1320CV18
功能描述：
静态随机存取存储器 512Kx36 1.8V DDR II 静态随机存取存储器
RoHS：
否
制造商：
Cypress Semiconductor
存储容量：
16 Mbit
组织：
1 M x 16
访问时间：
55 ns
电源电压-最大：
3.6 V
电源电压-最小：
2.2 V
最大工作电流：
22 uA
最大工作温度：
+ 85 C
最小工作温度：
- 40 C
安装风格：
SMD/SMT
封装/箱体：
TSOP-48
封装：
Tray

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市毅创腾电子科技有限公司	CY7C1320CV18-267BZXC	Cypress		165-FBGA	5800	Cypress一级分销,原装原盒原包装!	询价
深圳市一线半导体有限公司	CY7C1320CV18-250BZXC	Cypress	24+	BGA165	85		询价
深圳市恒创达实业有限公司	CY7C1320CV18-250BZC	CYPRESS	17+	FBGA-165	6200	100%原装正品现货	询价
深圳市华来深电子有限公司	CY7C1320CV18-167BZC	CYPRESS	23+	BGA165	8560	受权代理!全新原装现货特价热卖!	询价
深圳市华斯顿科技有限公司	CY7C1320CV18-250BZC	CYPRESS	25+23+	165FBGA	23249	绝对原装正品全新进口深圳现货	询价
深圳市赛尔通科技有限公司	CY7C1320CV18-250BZXC	Cypress	23+	165-FBGA	65600		询价
北京逸博微科技有限公司	CY7C1320CV18-250BZC	CY	20+	功分器	67	全新现货热卖中欢迎查询	询价
深圳市欧亚佳电子有限公司	CY7C1320CV18-250BZC	CYPRESS	20+	165FBGA	11520	特价全新原装公司现货	询价
深圳市斌腾达科技有限公司	CY7C1320CV18-267BZXC	Cypress Semiconductor Corp	21+	48-VFBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	CY7C1320CV18-267BZXC	Cypress Semiconductor Corp	24+	165-FBGA(13x15)	56200	一级代理/放心采购	询价

更多CY7C1320CV18供应商更新时间2026-2-3 16:31:00

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