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CY7C1318BV18

18-Mbit DDR-II SRAM 2-Word Burst Architecture

Features • 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) • 300-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency • Double Data Rate (DDR) interfaces (data transferred at 600 MHz) @ 300 MHz • Two input clocks (K and K) for precise DDR timing — SRAM u

文件:257.709 Kbytes 页数:24 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318BV18

18-Mbit DDR-II SRAM 2-Word Burst Architecture

文件:515.89 Kbytes 页数:28 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318BV18

18-Mbit DDR-II SRAM 2-Word Burst Architecture

文件:1.71052 Mbytes 页数:31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318BV18

18-Mbit DDR-II SRAM 2-Word Burst Architecture

• 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)\n• 300-MHz clock for high bandwidth\n• 2-Word burst for reducing address bus frequency\n• Double Data Rate (DDR) interfaces\n   (data transferred at 600 MHz) @ 300 MHz\n• Two input clocks (K and K) for precise DDR timing\n   — SRAM uses rising e;

Infineon

英飞凌

CY7C1318BV18-167BZC

18-Mbit DDR-II SRAM 2-Word Burst Architecture

Features • 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) • 300-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency • Double Data Rate (DDR) interfaces (data transferred at 600 MHz) @ 300 MHz • Two input clocks (K and K) for precise DDR timing — SRAM u

文件:257.709 Kbytes 页数:24 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318BV18-200BZC

18-Mbit DDR-II SRAM 2-Word Burst Architecture

Features • 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) • 300-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency • Double Data Rate (DDR) interfaces (data transferred at 600 MHz) @ 300 MHz • Two input clocks (K and K) for precise DDR timing — SRAM u

文件:257.709 Kbytes 页数:24 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318BV18-250BZC

18-Mbit DDR-II SRAM 2-Word Burst Architecture

Features • 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) • 300-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency • Double Data Rate (DDR) interfaces (data transferred at 600 MHz) @ 300 MHz • Two input clocks (K and K) for precise DDR timing — SRAM u

文件:257.709 Kbytes 页数:24 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318BV18_11

18-Mbit DDR-II SRAM 2-Word Burst Architecture

文件:1.71052 Mbytes 页数:31 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318BV18-167BZC

18-Mbit DDR-II SRAM 2-Word Burst Architecture

文件:515.89 Kbytes 页数:28 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

CY7C1318BV18-167BZI

18-Mbit DDR-II SRAM 2-Word Burst Architecture

文件:515.89 Kbytes 页数:28 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

详细参数

  • 型号:

    CY7C1318BV18

  • 功能描述:

    静态随机存取存储器 1Mx18 1.8V COM DDR II 静态随机存取存储器

  • RoHS:

  • 制造商:

    Cypress Semiconductor

  • 存储容量:

    16 Mbit

  • 组织:

    1 M x 16

  • 访问时间:

    55 ns

  • 电源电压-最大:

    3.6 V

  • 电源电压-最小:

    2.2 V

  • 最大工作电流:

    22 uA

  • 最大工作温度:

    + 85 C

  • 最小工作温度:

    - 40 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    TSOP-48

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
CYPRESS
25+
BGA
3600
大量现货库存,提供一站式服务!
询价
Cypress
165-FBGA
1500
Cypress一级分销,原装原盒原包装!
询价
CY
24+
BGA
4
询价
CYPRESS
2015+
SOP/QFP/PLCC
19889
一级代理原装现货,特价热卖!
询价
CY
24+
BGA
6980
原装现货,可开13%税票
询价
CYPRESS
20+
165FBGA
11520
特价全新原装公司现货
询价
CYPRESS/赛普拉斯
2022+
10
全新原装 货期两周
询价
Cypress Semiconductor Corp
21+
54-VFBGA
5280
进口原装!长期供应!绝对优势价格(诚信经营
询价
Cypress Semiconductor Corp
24+
165-FBGA(13x15)
56200
一级代理/放心采购
询价
CYPRESS/赛普拉斯
23+
NA
1218
原装正品代理渠道价格优势
询价
更多CY7C1318BV18供应商 更新时间2025-11-30 11:02:00