CY7C1318BV18中文资料18-Mbit DDR-II SRAM 2-Word Burst Architecture数据手册Infineon规格书

特性 Features

• 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)
• 300-MHz clock for high bandwidth
• 2-Word burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces
   (data transferred at 600 MHz) @ 300 MHz
• Two input clocks (K and K) for precise DDR timing
   — SRAM uses rising edges only
• Two input clocks for output data (C and C) to minimize
   clock-skew and flight-time mismatches
• Echo clocks (CQ and CQ) simplify data capture in
   high-speed systems
• Synchronous internally self-timed writes
• 1.8V core power supply with HSTL inputs and outputs
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V–VDD)
• Available in 165-ball FBGA package (13 x 15 x 1.4 mm)
• Offered in both lead-free and non lead-free packages
• JTAG 1149.1-compatible test access port
• Delay Lock Loop (DLL) for accurate data placement