16-Mbit (1M x 16) Static RAM

Functional Description The CY7C1061DV33 is a high performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 175 mA at 100 MHz ■ Low CMOS standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3 V

文件：408.55 Kbytes 页数：10 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1 M words 횞 16 bit) Static RAM with Error-Correcting Code (ECC)

Functional Description CY7C1061G and CY7C1061GE are high-performance CMOS fast static RAM devices with embedded ECC[1]. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY7C1061GE device includes an ERR pin that signals a single-bit error-det

文件：563.24 Kbytes 页数：18 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

16-Mbit (1 M words 횞 16 bit) Static RAM with Error-Correcting Code (ECC)

Functional Description CY7C1061G and CY7C1061GE are high-performance CMOS fast static RAM devices with embedded ECC[1]. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY7C1061GE device includes an ERR pin that signals a single-bit error-det

文件：563.24 Kbytes 页数：18 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2M x 8 Static RAM

Features • High speed — tAA = 10, 12 ns • Low active power — 990 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1 and CE2 features • Available in Pb-free

文件：249.57 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2M x 8 Static RAM

Features • High speed — tAA = 10, 12 ns • Low active power — 990 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1 and CE2 features • Available in Pb-free

文件：249.57 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2M x 8 Static RAM

Features • High speed — tAA = 10, 12 ns • Low active power — 990 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1 and CE2 features • Available in Pb-free

文件：249.57 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2M x 8 Static RAM

Features • High speed — tAA = 10, 12 ns • Low active power — 990 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1 and CE2 features • Available in Pb-free

文件：249.57 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2M x 8 Static RAM

Features • High speed — tAA = 10, 12 ns • Low active power — 990 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1 and CE2 features • Available in Pb-free

文件：249.57 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2M x 8 Static RAM

Features • High speed — tAA = 10, 12 ns • Low active power — 990 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1 and CE2 features • Available in Pb-free

文件：249.57 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2M x 8 Static RAM

Features • High speed — tAA = 10, 12 ns • Low active power — 990 mW (max.) • Operating voltages of 3.3 ± 0.3V • 2.0V data retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1 and CE2 features • Available in Pb-free

文件：249.57 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司