1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

文件：269.18 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

文件：269.18 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

文件：269.18 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

文件：269.18 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Functional Description The CY7C1061AV25 is a high-performance CMOS Static RAM organized as 1,048,576 words by 16 bits. Features • High speed —tAA= 8, 10, 12 ns • Low active power — 1080 mW (max.) • Operating voltages of 2.5 ± 0.2V • 1.5V data retention • Automatic powe

文件：269.18 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

文件：270.36 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

文件：270.36 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

文件：270.36 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

文件：270.36 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 16 Static RAM

Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ 990 mW (max) ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power down when deselected ■ TTL compatible inputs and outputs ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free and n

文件：270.36 Kbytes 页数：11 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司