1M x 4 Static RAM

Functional Description The CY7C1046BN is a high performance CMOS static RAM organized as 1,048,576 words by 4 bits. Features • Low active power — 825 mW (max) • Low CMOS standby power — 44 mW (max) • 2.0V data retention (400 μW at 2.0V retention) • Automatic power down when deselecte

文件：292.33 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 4 Static RAM

Functional Description The CY7C1046BN is a high performance CMOS static RAM organized as 1,048,576 words by 4 bits. Features • Low active power — 825 mW (max) • Low CMOS standby power — 44 mW (max) • 2.0V data retention (400 μW at 2.0V retention) • Automatic power down when deselecte

文件：292.33 Kbytes 页数：9 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1M x 4 Static RAM

Infineon

英飞凌

4-Mbit (1 M 횞 4) Static RAM

文件：466.58 Kbytes 页数：15 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

4-Mbit (1M x 4) Static RAM

Functional Description The CY7C1046D[1] is a high-performance CMOS static RAM organized as 1M words by 4 bits. Features ■ Pin- and function-compatible with CY7C1046B ■ High speed ❐ tAA = 10 ns ■ CMOS for optimum speed/power ■ Low active power ❐ ICC = 90 mA @ 10 ns ■ Low CMOS Stand

文件：393.77 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司