首页>CY15V116QSN-108BKXI>规格书详情

CY15V116QSN-108BKXI集成电路(IC)的存储器规格书PDF中文资料

CY15V116QSN-108BKXI
厂商型号

CY15V116QSN-108BKXI

参数属性

CY15V116QSN-108BKXI 封装/外壳为24-TBGA;包装为托盘;类别为集成电路(IC)的存储器;产品描述:16MB EXCELON ULTRA FERROELECTRIC

功能描述

16-Mb EXCELON??Ultra Ferroelectric RAM (F-RAM) Serial (quad SPI), 2048K 횞 8, industrial

封装外壳

24-TBGA

文件大小

1.57869 Mbytes

页面数量

106

生产厂商

INFINEON

中文名称

英飞凌

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-8-10 20:00:00

人工找货

CY15V116QSN-108BKXI价格和库存,欢迎联系客服免费人工找货

CY15V116QSN-108BKXI规格书详情

特性 Features

• 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K x 8

- Virtually unlimited endurance of 100 trillion (1014) read/write cycles

- 151-year data retention (See “Data retention and endurance” on page 88)

- Infineon no delay technology writes

- Advanced high-reliability ferroelectric process

• Single and multi I/O serial peripheral interface (SPI)

- Serial bus interface SPI protocols

- Supports SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transfers

- Supports SPI mode 0 (0, 0) for all DDR mode transfers

- Extended I/O SPI protocols

- Dual SPI (DPI) protocols

- Quad SPI (QPI) protocols

• SPI clock frequency

- Up to 108 MHz frequency SPI single data rate (SDR)

- Up to 46 MHz frequency SPI double data rate (DDR)

• Execute-in-place (XIP) for memory read/write

• Write protection, data security, and data integrity

• Hardware protection using the write protect (WP) pin

• Software block protection

• Embedded error correction code (ECC) and cyclic redundancy check (CRC) for enhanced data integrity

- ECC detects and corrects 2-bit error. If a 3-bit error occurs, it does not correct but reports through the ECC

status register

- CRC detects any accidental change to raw data

• Extended electronic signatures

- Device ID includes manufacturer ID and product ID

- Unique ID

- User programmable serial number

• Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Content can survive up to three standard reflow cycles

• Low-power consumption at high speed

- 14 mA (typ) active current for 108 MHz SPI SDR

- 22 mA (typ) active current for 108 MHz QSPI SDR

- 16.5 mA (typ) active current for 46 MHz QSPI DDR

- 115 μA (typ) standby current

- 1.1 μA (typ) deep power-down mode current

- 0.1 μA (typ) Hibernate mode current

• Low-voltage operation:

- CY15V116QSN: VDD = 1.71 V to 1.89 V

- CY15B116QSN: VDD = 1.8 V to 3.6 V

• Operating temperature: –40°C to +85°C

Functional Description

• Packages

- 24-ball fine pitch ball grid array (FBGA)

• Restriction of hazardous substances (RoHS) compliant

产品属性

  • 产品编号:

    CY15V116QSN-108BKXI

  • 制造商:

    Cypress Semiconductor Corp

  • 类别:

    集成电路(IC) > 存储器

  • 系列:

    Excelon™-Ultra, F-RAM™

  • 包装:

    托盘

  • 存储器类型:

    非易失

  • 存储器格式:

    FRAM

  • 技术:

    FRAM(铁电体 RAM)

  • 存储容量:

    16Mb(2M x 8)

  • 存储器接口:

    SPI - 四 I/O,QPI

  • 电压 - 供电:

    1.71V ~ 1.89V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    24-TBGA

  • 供应商器件封装:

    24-FBGA(6x8)

  • 描述:

    16MB EXCELON ULTRA FERROELECTRIC

供应商 型号 品牌 批号 封装 库存 备注 价格
CYPRESS/赛普拉斯
24+
NA/
30
优势代理渠道,原装正品,可全系列订货开增值税票
询价
CYPRESS/赛普拉斯
25+
NA
30
原装正品,假一罚十!
询价
NS
24+
SOP
50
询价
CRYSTEK
15
公司优势库存 热卖中!
询价
CONEXANT
24+
QFP
6618
公司现货库存,支持实单
询价
Infineon Technologies
23+/24+
24-TBGA
8600
只供原装进口公司现货+可订货
询价
CYPRESS/赛普拉斯
22+
BGA
17800
原装正品
询价
ADI
23+
NA
7000
询价
CYPRESS/赛普拉斯
23+
NA
5000
专注配单,只做原装进口现货
询价
CY
24+
NA
300
进口原装正品优势供应
询价