CY15V116QN-40BKXI集成电路（IC）的存储器规格书PDF中文资料

厂商型号	CY15V116QN-40BKXI
参数属性	CY15V116QN-40BKXI 封装/外壳为24-TBGA；包装为管件；类别为集成电路（IC）的存储器；产品描述：16-MBIT SERIAL (SPI) F-RAM, AUTO
功能描述	16Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 2048K × 8, 40MHz, industrial
封装外壳	24-TBGA
文件大小	353.34 Kbytes
页面数量	36 页
生产厂商	Infineon Technologies AG
企业简称	INFINEON【英飞凌】
中文名称	英飞凌科技股份公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-5 17:04:00
人工找货	CY15V116QN-40BKXI价格和库存，欢迎联系客服免费人工找货

特性 Features

• 16-Mb ferroelectric random access memory (F-RAM) logically organized as 2048K × 8

- Virtually unlimited endurance of 1000 trillion (1015) read/write

- 151-year data retention (see “Data retention and endurance” on page 24)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

• Fast serial peripheral interface (SPI)

- Up to 40 MHz frequency

- Supports SPI Mode 0 (0, 0) and Mode 3 (1, 1)

• Sophisticated write protection scheme

- Hardware protection using the Write Protect (WP) pin

- Software protection using Write Disable (WRDI) instruction

- Software block protection for 1/4, 1/2, or entire array

• Device ID and Serial number

- Manufacturer ID and Product ID

- Unique Device ID

- Serial number

• Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Stored content can survive up to three standard reflow soldering cycles

• Low-power consumption

- 2.7 mA (typ) active current at 40 MHz

- 14 μA (typ) standby current

- 1.10 μA (typ) deep power-down mode current

- 0.1 μA (typ) hibernate mode current

• Low-voltage operation

- : VDD = 1.71 V to 1.89 V

- CY15B116QN: VDD = 1.8 V to 3.6 V

• Industrial operating temperature: 40°C to +85°C

• Packages

- 24-ball fine pitch ball grid- array (24-ball FBGA)

• Restriction of hazardous substances (RoHS) compliant