CY15V108QN-20BFXI中文资料英飞凌数据手册PDF规格书

特性 Features

• 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8

- Virtually unlimited endurance 1000 trillion (1015) read/writes

- 151-year data retention (See “Data retention and endurance” on page 26)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

• Fast serial peripheral interface (SPI)

- Up to 40 MHz frequency

- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

• Sophisticated write protection scheme

- Hardware protection using the Write Protect (WP) pin

- Software protection using Write Disable (WRDI) instruction

- Software block protection for 1/4, 1/2, or entire array

• Device ID and serial number

- Manufacturer ID and product ID

- Unique device ID

- Serial number

• Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Stored content can survive up to three standard reflow soldering cycles

• Low-power consumption

- 2.6 mA (typ) active current at 40 MHz

- 3.5 μA (typ) standby current

- 0.90 μA (typ) deep power down mode current

- 0.1 μA (typ) hibernate mode current

• Low-voltage operation

- CY15V108QN: VDD = 1.71 V to 1.89 V

- CY15B108QN: VDD = 1.8 V to 3.6 V

• Commercial and industrial operating temperature

- Commercial operating temperature: 0°C to +70°C

- Industrial operating temperature: –40°C to +85°C

• Packages

- 8-pin small outline integrated circuit (SOIC) package

- 8-pin grid-array quad flat no-lead (GQFN) package (NRND)[1]

- 8-pin ultra-thin fine-pitch land grid array (UFLGA) package

• Restriction of hazardous substances (RoHS) compliant