1 Mbit (128K x 8) Serial SPI nvSRAM

Functional Overview The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

文件：1.41793 Mbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128 K x 8) Serial SPI nvSRAM Infinite read, write, and RECALL cycles

文件：1.18287 Mbytes 页数：26 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1-Mbit (128 K x 8) Serial SPI nvSRAM

文件：1.36336 Mbytes 页数：27 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial SPI nvSRAM

Functional Overview The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

文件：1.41793 Mbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial SPI nvSRAM

Functional Overview The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

文件：1.41793 Mbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial SPI nvSRAM

Functional Overview The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

文件：1.41793 Mbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial SPI nvSRAM

Functional Overview The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

文件：1.41793 Mbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial SPI nvSRAM

文件：914.1 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial SPI nvSRAM

文件：914.1 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial SPI nvSRAM

Functional Overview\nThe Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1 Mbit nonvolatile static RAM with a nonvolatile element in each memory cell. The memory is organized as 128K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creating the worl ■ 1 Mbit Nonvolatile SRAM\n  ❐ Internally organized as 128K x 8\n  ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power down (AutoStore) or by user using HSB pin (Hardware Store) or SPI instruction (Software Store)\n  ❐ RECALL to SRAM initiated on power up (Power Up Recall) o;

Infineon

英飞凌