CY14B101Q3-SFXCT数据手册Infineon中文资料规格书

描述 Description

Functional Overview
The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1 Mbit nonvolatile static RAM with a nonvolatile element in each memory cell. The memory is organized as 128K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, creating the world’s most reliable nonvolatile memory.

特性 Features

■ 1 Mbit Nonvolatile SRAM
  ❐ Internally organized as 128K x 8
  ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power down (AutoStore) or by user using HSB pin (Hardware Store) or SPI instruction (Software Store)
  ❐ RECALL to SRAM initiated on power up (Power Up Recall) or by SPI Instruction (Software RECALL)
  ❐ Automatic STORE on power down with a small capacitor
■ High Reliability
  ❐ Infinite Read, Write, and RECALLl cycles
  ❐ 200,000 STORE cycles to QuantumTrap
  ❐ Data Retention: 20 Years
■ High Speed Serial Peripheral Interface (SPI)
  ❐ 40 MHz Clock rate
  ❐ Supports SPI Modes 0 (0,0) and 3 (1,1)
■ Write Protection
  ❐ Hardware Protection using Write Protect (WP) Pin
  ❐ Software Protection using Write Disable Instruction
  ❐ Software Block Protection for 1/4,1/2, or entire Array
■ Low Power Consumption
  ❐ Single 3V +20%, –10% operation
  ❐ Average VCC current of 10 mA at 40 MHz operation
■ Industry Standard Configurations
  ❐ Commercial and industrial temperatures
  ❐ CY14B101Q1 has identical pin configuration to industry standard 8-pin NV Memory
  ❐ 8-pin DFN and 16-pin SOIC Packages
  ❐ RoHS compliant