1 Mbit (128K x 8) Serial SPI nvSRAM

Functional Overview The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

文件：1.41793 Mbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial SPI nvSRAM

文件：914.1 Kbytes 页数：24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial SPI nvSRAM

Functional Overview The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

文件：1.41793 Mbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial SPI nvSRAM

Functional Overview The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

文件：1.41793 Mbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

1 Mbit (128K x 8) Serial SPI nvSRAM

Functional Overview The Cypress CY14B101Q1/CY14B101Q2/CY14B101Q3 combines a 1-Mbit nvSRAM with a nonvolatile element in each memory cell with serial SPI interface. The memory is organized as 128 K words of 8 bits each. The embedded nonvolatile elements incorporate the QuantumTrap technology, cr

文件：1.41793 Mbytes 页数：22 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司