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CZT5401

PNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5401typeisanPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighvoltageamplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

CZT5401

PNPSiliconTransistor

PNPSiliconTransistor

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

CZT5401

EpitaxialPlanarTransistor

Description TheCZT5401isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

CZT5401

SOT-223Plastic-EncapsulateTransistors

FEATURES HighVoltage HighVoltageAmplifierApplication

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

CZT5401

TRANSISTOR(PNP)

FEATURES PowerdissipationPCM:1W(Tamb=25℃) CollectorcurrentICM:-0.6A Collector-basevoltageV(BR)CBO:-160V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

CZT5401E

ENHANCEDSPECIFICATIONSURFACEMOUNTPNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCZT5401EisaPNPSiliconTransistor,packagedinanSOT-223case,designedforgeneralpurposeamplifierapplicationsrequiringhighbreakdownvoltage. MARKING:FULLPARTNUMBER FEATURES: •HighCollectorBreakdownVoltage250V •LowLeakageCurrent50n

CentralCentral Semiconductor Corp

美国中央半导体

DM5401

Quad2-InputNANDGateswithOpen-CollectorOutputs

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

DMBT5401

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

DCCOM

Dc Components

DMMT5401

MATCHEDPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •BVCEO>-150V •IC=-200mAHighCollectorCurrent •PairofPNPTransistorsthatareIntrinsicallyMatched(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •IdealforMediumPowerAmplificationandSwitching •FullyInternallyIsolatedinaSmallSurfaceMountPackage •

DIODESDiodes Incorporated

美台半导体

DMMT5401

MATCHEDPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

美台半导体

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