首页 >CXD2230GA>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SurfaceMountZenerDiodes | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
METALGATERFSILICONFET | SEME-LAB Seme LAB | SEME-LAB | ||
METALGATERFSILICONFET | SEME-LAB Seme LAB | SEME-LAB | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •110mΩ@VGS=4.5V •145mΩ@VGS=2.5V •230mΩ@VGS=1.8V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes1,2and3) •QualifiedtoAEC-Q101 | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •110mΩ@VGS=4.5V •145mΩ@VGS=2.5V •230mΩ@VGS=1.8V •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •Lead,HalogenandAntimonyFree,RoHSCompliant GreenDevice(Notes1,2and3) •QualifiedtoAEC-Q101 | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
N-CHANNELENHANCEMENTMODEMOSFET DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •GeneralPurposeInterfacingSwitch •PowerManagementFunctions •BoostAppli | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
Low-JitterI2C/SPIProgrammableLVDSOscillator | MicrelMicrel Semiconductor 麦瑞半导体 | Micrel | ||
POLYETHYLENEBorstar DESCRIPTION Borstar®FB2230isproducedusingtheproprietaryBorstar®bimodaltechnologyresultingineasyextrusionwith superiormechanicalproperties.Filmmadefromtheproductexhibitsexcellentmechanicalstrengthatnormalas wellaslowtemperature,goodsealingpropertiesandsuperior | BOROUGEBOROUGE PTE. LTD. 博禄博禄化工 | BOROUGE | ||
DC-BusbarEMC/RFIFilterforEVchargingapplications Featuresandbenefits -FN222X,FN223XandFN224Xseriesoffilters providesstate-of-the-artEMIattenuationwitha choiceofthreeperformancelevels -ThefiltersarebuilttofitperfectlytohighpowerEV chargingapplications -Theshapeallowsaconvenientandspace-saving installation | SCHAFFNERSchaffner International Ltd 夏弗纳 | SCHAFFNER | ||
NPNSiliconSurfaceMountTransistorwithMonolithicBiasResistorNetwork Description Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamonolithicbiasnetworkconsistingoftworesistors;aseriesbaseresistorandabase-emitterr | HSMCHi-Sincerity Mocroelectronics 华昕华昕科技有限公司 | HSMC |
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