| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PremiumTopEntryAccelerometer,Submersible Features •PrecisionTopEntryAccelerometer •100mV/g±5 •150°CMaxTemperatureRange •±80gDynamicRange •IntegralPURCable •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25MountingStudsIncluded •SealedtoIP68 | STi Subaru Tecnica International | STi | ||
PremiumDualOutputTopEntryAccelerometerwithTemperatureand3PinMS5015 Features •DualOutputPrecisionAccelerometerwithTemperature •100mV/g±15and10mV/°C •150°CMaxTemperatureRange •±80gDynamicRange •3PinMS5015Connector •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25Mounting | STi Subaru Tecnica International | STi | ||
PremiumDualOutputTopEntryAccelerometerwithTemperatureandIntegralArmoredBraidedCable Features •DualOutputPrecisionAccelerometerwithTemperature •100mV/g±5and10mV/°C •150°CMaxTemperatureRange •±80gDynamicRange •IntegralBraidedArmorCable •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25Moun | STi Subaru Tecnica International | STi | ||
PremiumDualOutputTopEntryAccelerometerwithTemperatureandSubmersiblePURIntegralCable Features •DualOutputPrecisionAccelerometerwithTemperature •100mV/g±5and10mV/°C •150°CMaxTemperatureRange •±80gDynamicRange •IntegralBraidedArmorCable •Class1Division2Approved •Class1Division1ApprovedwithISBarrierorIsolator •¼”-28UNFandM8x1.25Moun | STi Subaru Tecnica International | STi | ||
SmallSignalTransistorPNP-LowNoiseAmplifierTransistorChip PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize13.7x13.7MILS DieThickness5.9MILS BaseBondingPadArea4.0x4.0MILS EmitterBondingPadArea5.5x5.5MILS TopSideMetalizationAl-Si-30,000Å BackSideMetalizationAu-12,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SiliconNPNEpitaxial Application •Lowfrequencypoweramplifier •Complementarypairwith2SB738and2SB739 | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
DRA78xInfotainmentApplicationsProcessor | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
DRA78xInfotainmentApplicationsProcessor | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
DRA78xInfotainmentApplicationsProcessor | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
DRA78xInfotainmentApplicationsProcessor | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
EvaluationBoardforADG788TripleSPDTSwitchinChipScalePackage | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
2.5ohm,1.8Vto5.5V,2.5V,-2.5VTriple/QuadSPDTSwitchesinChipScalePackages GENERALDESCRIPTION TheADG786andADG788arelowvoltage,CMOSdevicescomprisingthreeindependentlyselectableSPDT(singlepole,doublethrow)switchesandfourindependentlyselectableSPDTswitchesrespectively. Lowpowerconsumptionandoperatingsupplyrangeof1.8Vto5.5Vanddual±2 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES *Lowequivalenton-resistance;RCE(sat)93mΩat3A *Gainof300atIC=2AmpsandVerylowsaturationvoltage APPLICATIONS *Batterypoweredcircuits | Zetex Zetex Semiconductors | Zetex | ||
SOT223PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES *Lowequivalenton-resistance;RCE(sat)93mΩat3A *Gainof300atIC=2AmpsandVerylowsaturationvoltage APPLICATIONS *Batterypoweredcircuits | Zetex Zetex Semiconductors | Zetex | ||
PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR FEATURES *Lowequivalenton-resistance;RCE(sat)93mΩat3A *Gainof300atIC=2AmpsandVerylowsaturationvoltage APPLICATIONS *Batterypoweredcircuits | Zetex Zetex Semiconductors | Zetex | ||
SOT223PNPSILICONPLANARMEDIUM Features •BVCEO>-15V •BVCBO>-15V •IC=-3AHighContinuousCurrent •hFE>300@-2AandLowSaturationVoltage •ExtremelyLowEquivalentOn-ResistanceRCE(sat)93mΩat-3A •ComplementaryNPNType:FZT688B •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimony | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
PNPSiliconPlanarMediumPowerHighGainTransistor Features ●Lowequivalenton-resistance;RCE(sat)93mÙat3A. ●Gainof300atIC=2AmpsandVerylowsaturationvoltage. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
15VPNPMEDIUMPOWERHIGHGAINTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
SOT223PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR Features •BVCEO>-15V •BVCBO>-15V •IC=-3AHighContinuousCurrent •hFE>300@-2AandLowSaturationVoltage •ExtremelyLowEquivalentOn-ResistanceRCE(sat)93mΩat-3A •ComplementaryNPNType:FZT688B •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimony | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
15VPNPMEDIUMPOWERHIGHGAINTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SONY |
2023+ |
250 |
8700 |
原装现货 |
询价 | ||
CONEXANT |
1844+ |
QFN |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
CONEXANT |
2019 |
QFN |
55000 |
绝对原装正品假一罚十! |
询价 | ||
CONEXANT |
19+ |
QFN |
29600 |
绝对原装现货,价格优势! |
询价 | ||
SONY/索尼 |
21+ROHS |
DIP18 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
SONY |
23+ |
SOP |
115 |
询价 | |||
SONY |
23+ |
DIP |
3880 |
正品原装货价格低qq:2987726803 |
询价 | ||
SONY |
23+ |
DIP |
8927 |
询价 | |||
SONY |
22+ |
DIP-28 |
2500 |
郑重承诺只做原装进口货 |
询价 | ||
SONY |
717 |
询价 |
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