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FTD2007

Ultrahigh-SpeedSwitchingApplications

Features •LowONresistance. •4Vdrive. •Mountingheight1.1mm. •Compositetype,facilitatinghigh-densitymounting.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

G2007

6CHserialinputmotordriverICforDSC

GMTGlobal Mixed-mode Technology Inc

致新科技

G2007

RubberPush-InBumpers

HeycoHeyco.

海科

GAPM2007N

MinisizeofDiscretesemiconductorelements

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

GBJ2007

SINGLEPHASE20.0AMPBRIDGERECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT20.0Amperes FEATURES *Idealforprintedcircuitboard *Lowforwardvoltage *Mountingposition:Any *Lowleakagecurrent

UNIOHMUniohm

台湾厚声

GBJ2007

SINGLEPHASE20.0AMPBRIDGERECTIFIERS

VOLTAGERANGE50to1000VoltsCURRENT20.0Amperes FEATURES *Idealforprintedcircuitboard *Lowforwardvoltage *Mountingposition:Any *Lowleakagecurrent

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GTL2007

13-bitGTLtoLVTTLtranslatorwithpowergoodcontrol

Generaldescription TheGTL2007isacustomizedtranslatorbetweendualXeonprocessors,PlatformHealthManagement,SouthBridgeandPowerSupplyLVTTLandGTLsignals. Features ■OperatesasaGTLtoLVTTLsamplingreceiverorLVTTLtoGTLdriver ■3.0Vto3.6Voperation ■LVTTLI/Onot5

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

GTL2007PW

13-bitGTLtoLVTTLtranslatorwithpowergoodcontrol

Generaldescription TheGTL2007isacustomizedtranslatorbetweendualXeonprocessors,PlatformHealthManagement,SouthBridgeandPowerSupplyLVTTLandGTLsignals. Features ■OperatesasaGTLtoLVTTLsamplingreceiverorLVTTLtoGTLdriver ■3.0Vto3.6Voperation ■LVTTLI/Onot5

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

HAF2007

SiliconNChannelMOSFETSeriesPowerSwitching

ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowerconsumpt

HitachiHitachi Semiconductor

日立日立公司

HAF2007

SiliconNChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingo

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

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