FDD6685

30VP-ChannelPowerTrenchMOSFET

GeneralDescription ThisP-ChannelMOSFETisaruggedgateversionofFairchildSemiconductor’sadvancedPowerTrenchprocess.Ithasbeenoptimizedforpowermanagementapplicationsrequiringawiderangeofgavedrivevoltageratings(4.5V–25V). Features ·–40A,–30V.RDS(ON)=20

FDD6685

P-Channel30-V(D-S)MOSFET

FDD6685

-30VP-Channel

GeneralDescription ThisP-ChannelMOSFEThasbeenoptimizedfor powermanagementapplicationsrequiringawide rangeofgavedrivevoltageratings(4.5V–25V). Features Fastswitchingspeed HighperformancetrenchtechnologyforextremelylowRDS(ON) Highpowerandcurrenthandlingcapa

FDD6685

P-channelEnhancementModePowerMOSFET

Features VDS=-30V,ID=-30A RDS(ON)

FDS6685

-30VP-ChannelMOSFET

Features Lowgatecharge(17nCtypical) Fastswitchingspeed Highperformancetrenchtechnologyforextremely lowRDS(ON) Highpowerandcurrenthandlingcapability (VGS=10V) VDS(V)=-30V ID=-8.8A RDS(ON)

FDS6685

P-ChannelLogicLevelPowerTrenchTMMOSFET

GeneralDescription ThisP-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thesedevicesarewellsuitedforlowvoltageandbatte

KDS6685

30VP-ChannelPowerTrenchMOSFET

MAX6685

Dual-OutputRemote-JunctionTemperatureSwitches

MSM6685

8,388,608-Wordx1-BitSerialRegister

GENERALDESCRIPTION TheMSM6685isaserialregistercomposedof8,388,608wordsxonebit,characterizedbymediumspeed,lowpowerconsumptionoperation. Thisdevicehasabuilt-ininternaladdressgenerationcircuitallowingcontinuousserialread/writeoperationbyexternalclockinput.Read

MSM6685A

8,388,608-Wordx1-BitSerialRegister

GENERALDESCRIPTION TheMSM6685Aisaserialregistercomposedof8,388,608wordsxonebit,characterizedbymediumspeed,lowpowerconsumptionoperation. Thisdevicehasabuilt-ininternaladdressgenerationcircuitallowingcontinuousserialread/writeoperationbyexternalclockinput.Read