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EM6635

LowPowerMicrocontrollerwithRCand32kHzoscillatorsand9highdriveoutputs

EMMICRO

EM Microelectronic - MARIN SA

FDD6635

N-channelEnhancementModePowerMOSFET

Features VDS=30V,ID=80A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDD6635

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=59A@TC=25℃ ·DrainSourceVoltage :VDSS=35V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDD6635

35VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeenproducedusingFairchildSemiconductor’sproprietaryPowerTrenchtechnologytodeliverlowRdsonandoptimizedBvdsscapabilitytooffersuperiorperformancebenefitintheapplications. Features •59A,35VRDS(ON)=10mΩ@VGS=10VRDS(ON

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF6635

DirectFETPowerMOSFET

Description TheIRF6635combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayoutgeo

IRF

International Rectifier

IRF6635PBF

DirectFETPowerMOSFET

Description TheIRF6635PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635PBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6635PBF

CompatiblewithexistingSurfaceMountTechniques

Description TheIRF6635PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6635TRPBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6635TRPBF

CompatiblewithexistingSurfaceMountTechniques

Description TheIRF6635PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

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