首页 >CW40NC60V>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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600V,40Ashort-circuitruggedIGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNEL50A-600V-TO-247VeryFastPowerMESHIGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel40A-600V-TO-247VeryfastswitchingPowerMESHIGBT Description ThisIGBTutilizestheadvancedPowerMESH™processresultinginanexcellenttrade-offbetweenswitchingperformanceandlowon-statebehavior. Features ■LowCRES/CIESratio(nocrossconductionsusceptibility) ■IGBTco-packagedwithultrafastfree-wheelingdiode | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel600V-50A-Max247VeryfastPowerMESH??IGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNEL600V-0.098ohm-40AISOTOPPowerMesh?줚IMOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
600V,40Ashort-circuitruggedIGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNEL50A-600VTO-247HyperFastPowerMESH??IGBT DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH™IGBTs,withoutstandingperformances.Thesuffix“V”identifiesafamilyoptimizedforhigh frequency. ■HIGHCURRENTCAPABI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-CHANNEL50A-600V-TO-247VeryFastPowerMESHIGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
40A-600V-ultrafastIGBT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel40A-600V-TO-247VeryfastswitchingPowerMESHIGBT Description ThisIGBTutilizestheadvancedPowerMESH™processresultinginanexcellenttrade-offbetweenswitchingperformanceandlowon-statebehavior. Features ■LowCRES/CIESratio(nocrossconductionsusceptibility) ■IGBTco-packagedwithultrafastfree-wheelingdiode | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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