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ECG3046

Optoisolators

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

FKBB3046

N-Ch30VFastSwitchingMOSFETs

Description AdvancedTrenchMOSTechnology LowGateCharge LowRDS(ON) 100EASGuaranteed GreenDeviceAvailable Applications PowerManagementinDesktopComputeror DC/DCConverters. IsolatedDC/DCConvertersinTelecomand Industrial.

FETEKFETek Technology Corp.

台湾东沅东沅科技股份有限公司

HFA3046

UltraHighFrequencyTransistorArrays

TheHFA3046,HFA3096,HFA3127andtheHFA3128areUltraHighFrequencyTransistorArraysthatarefabricatedfromIntersilCorporation’scomplementarybipolarUHF-1process.Eacharrayconsistsoffivedielectricallyisolatedtransistorsonacommonmonolithicsubstrate.TheNPNtransistorsexhibi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HFA3046

UltraHighFrequencyTransistorArrays

TheHFA3046,HFA3096,HFA3127andtheHFA3128areUltraHighFrequencyTransistorArraysthatarefabricatedfromIntersilCorporation’scomplementarybipolarUHF-1process.Eacharrayconsistsoffivedielectricallyisolatedtransistorsonacommonmonolithicsubstrate.TheNPNtransistorsexhibi

Intersil

Intersil Corporation

HFA3046

UltraHighFrequencyTransistorArrays

Intersil

Intersil Corporation

HFA3046

UltraHighFrequencyTransistorArrays

Features •NPNtransistor(fT)..........................8GHz •NPNcurrentgain(hFE)........................130 •NPNearlyvoltage(VA)........................50V •PNPtransistor(fT)................

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HFA3046B

UltraHighFrequencyTransistorArrays

TheHFA3046,HFA3096,HFA3127andtheHFA3128areUltraHighFrequencyTransistorArraysthatarefabricatedfromIntersilCorporation’scomplementarybipolarUHF-1process.Eacharrayconsistsoffivedielectricallyisolatedtransistorsonacommonmonolithicsubstrate.TheNPNtransistorsexhibi

Intersil

Intersil Corporation

HFA3046B

UltraHighFrequencyTransistorArrays

Intersil

Intersil Corporation

HFA3046BZ

UltraHighFrequencyTransistorArrays

Intersil

Intersil Corporation

HFA3046BZ

UltraHighFrequencyTransistorArrays

TheHFA3046,HFA3096,HFA3127andtheHFA3128areUltraHighFrequencyTransistorArraysthatarefabricatedfromIntersilCorporation’scomplementarybipolarUHF-1process.Eacharrayconsistsoffivedielectricallyisolatedtransistorsonacommonmonolithicsubstrate.TheNPNtransistorsexhibi

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

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