首页 >CW3004AAAS>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DACx300412-Bitand10-Bit,Ultra-Low-Power,QuadVoltageandCurrentOutputSmartDACsWithAuto-DetectedI2C,PMBus??orSPI | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
DACx300412-Bitand10-Bit,Ultra-Low-Power,QuadVoltageandCurrentOutputSmartDACsWithAuto-DetectedI2C,PMBus??orSPI | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
DACx300412-Bitand10-Bit,Ultra-Low-Power,QuadVoltageandCurrentOutputSmartDACsWithAuto-DetectedI2C,PMBus??orSPI | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
DACx3004W12-Bitand10-Bit,Ultra-Low-Power,QuadVoltageandCurrentOutputSmartDACsWithAuto-DetectedI2C,SPI,orPMBusInterface 1Features •Programmablevoltageorcurrentoutputswith flexibleconfiguration: –Voltageoutputs: •1LSBDNL •Gainsof1×,1.5×,2×,3×,and4× –Currentoutputs: •1LSBINLandDNL(8-bit) •Unipolarandbipolaroutputrangeoptions from25μAto250μA •35-μA/channelIDDin | TI1Texas Instruments 德州仪器美国德州仪器公司 | TI1 | ||
HIGHVOLTAGESURFACEMOUNTDUALSWITCHINGDIODE Features •FastSwitchingSpeed:Maximumof50ns •HighReverseBreakdownVoltageRating:350V •LowReverseCurrent:Maximumof100nAwhenVR=240Vat RoomTemperature •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •NewCutting-EdgeProcessTechnologyUsed •TotallyLead- | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
HIGHVOLTAGESURFACEMOUNTDUALSWITCHINGDIODE Features •FastSwitchingSpeed:Maximumof50ns •HighReverseBreakdownVoltageRating:350V •LowReverseCurrent:Maximumof100nAwhenVR=240Vat RoomTemperature •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •NewCutting-EdgeProcessTechnologyUsed •TotallyLead- | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
HIGHVOLTAGESURFACEMOUNTDUALSWITCHINGDIODE Features •FastSwitchingSpeed:Maximumof50ns •HighReverseBreakdownVoltageRating:350V •LowReverseCurrent:Maximumof100nAwhenVR=240Vat RoomTemperature •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •NewCutting-EdgeProcessTechnologyUsed •TotallyLead- | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
30VN-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
30V175CN-CHANNELENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美台半导体 | DIODES |
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