首页 >CW1030AAAP>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerAmplifierforPHS Description TheCXG1030NisapoweramplifierforPHS.ThisICisdesignedusingtheSony’sGaAsJ-FETprocessandoperatesatasinglepowersupply. Features •Outputpower21dBm •Positivepowersupply3.0V •Lowcurrentconsumption170mA •Highpowergain39dBTyp. •Smallmoldpacka | SonySony Semiconductor Solutions Group 索尼 | Sony | ||
SIL2Switch/ProximityDetectorRepeaterRelayOutputDIN-RailModelsD1030S,D1030D Features SIL2accordingtotoIEC61508:2010(Route2H)with Tproof=5/10years(≤10/>10oftotalSIF). SC2:SystematicCapabilitySIL2. InputfromZone0(Zone20),Division1, installationinZone2,Division2. NO/NCcontact/proximityDetectorInput. TwoSPDTRelayOutpu | GMI G.M. International | GMI | ||
Netz-GleichrichterdiodeRectifierDiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET400W-28V-175MHzPUSH-PULL | SEME-LAB Seme LAB | SEME-LAB | ||
LightingBusMappingCircuit | DEIAZ Device Engineering Incorporated | DEIAZ | ||
LightingBusMappingCircuit | DEIAZ Device Engineering Incorporated | DEIAZ | ||
REDLASERDIODE Features •Shortwavelength:635nm(Typ.) •Highoutputpower:5mWat60°C •Lowthresholdcuttent:lth=25mA(Typ.) Applications •Bar-codescanner •Industrialequipment | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET Features LowOn-Resistance LowInputCapacitance LowProfile,0.6mmMaxHeight ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applications LoadSwi | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
COMPLEMENTARYPAIRENHANCEMENTMODEMOSFET | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
Shieldedpowerinductors | EATONEaton All Rights Reserved. 伊顿伊顿公司 | EATON |
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