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FDD9510L

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=-50A@TC=25℃ ·DrainSourceVoltage :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FP9510PM

RFAMPLIFIERMODEL

APITECH

API Technologies Corp

GSS9510

NANDP-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投资控股勤益投资控股股份有限公司

HF9510

HERMETICALLYSEALEDRELAY

HONGFAHongfa Technology

宏发电声厦门宏发电声股份有限公司

IRF9510

PowerMOSFET(Vdss=-100V,Rds(on)=1.2ohm,Id=-4.0A)

IRF

International Rectifier

IRF9510

3.0A,100V,1.200Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitchingr

Intersil

Intersil Corporation

IRF9510

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半导体

IRF9510

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRF9510

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9510

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

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