Bipolar NPN Device

文件：11.1 Kbytes 页数：1 Pages

SEME-LAB

45V Input Buck Converter 3ch/2ch IC with Power MOSFET

文件：216.25 Kbytes 页数：2 Pages

FUJI

富士通

Power MOSFET(Vdss=-30V)

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

文件：95.6 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

文件：128.259 Kbytes 页数：10 Pages

IRF