首页 >CUP.V.10021>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DarlingtonPowerTransistors BipolarPowerTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
CERAMICDIELECTRICTRIMMERCAPACITORS | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
NPNSiliconPowerDarlingtonTransistorswithBase-EmitterSpeedupDiode SWITCHMODESeries NPNSiliconPowerDarlingtonTransistorswithBase-EmitterSpeedupDiode TheMJ10020andMJ10021Darlingtontransistorsaredesignedforhigh-voltage,high-speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforlineoperateds | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
NPNSiliconPowerDarligtonTransistorwithBase-EmitterSpeedupDiode60AMPERE,200AND250VOLTS,250WATTS FEATURES: 1.FastTurn–OffTimes 150nsInductiveFallTimeat25ºC(Typ) 750nsInductiveStorageTimeat25ºC(Typ) 2.OperatingTemperatureRange–65to+200ºC 3.100ºCPerformanceSpecifiedfor: ReversedBiasedSOAwithInductiveLoads SwitchingTimeswithInductiveLoads Saturatio | CDIL Continental Device India Limited | CDIL | ||
NPNSILICONPOWERDARLINGTONTRANSISTORS SWITCHMODE™Series NPNSiliconPowerDarlingtonTransistorswithBase-EmitterSpeedupDiode TheMJ10020andMJ10021Darlingtontransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforlineoperated | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
60AMPERENPNSILICONPOWERDARLINGTONTRANSISTORS200AND250VOLTS250WATTS SWITCHMODESeries NPNSiliconPowerDarlington TransistorswithBase-EmitterSpeedupDiode TheMJ10020andMJ10021Darlingtontransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforlineoperated | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
POWERTRANSISTORS(60A,200-250V,250W)
| MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
NPNDarlingtonTransistors NPNDarlingtonTransistorsTO-204MA(TO-3) | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
30Watts,1.4-1.6GHzGOLDMOSFieldEffectTransistor Description ThePTF10021isaninternallymatchedcommonsourceN-channelenhancement-modelateralMOSFETintendedforlineardriverandfinalapplicationsinthe1.4to1.6GHzrangesuchasDAB/DAR.Itisratedat30wattspoweroutput.Nitridesurfacepassivationandfullgoldmetallizatione | EricssonEricsson Microelectronics 爱立信爱立信公司 | Ericsson | ||
100-113Gbps10:4Mux/CMUwithDual-DQPSKPrecoderforShortReachApplications | SEMTECHSemtech Corporation 升特 | SEMTECH |
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