BD789

ComplementaryPlasticSiliconPowerTransistors

...designedforlowpoweraudioamplifierandlow-current,highspeedswitchingapplications. •HighCollector-EmitterSustainingVoltage—VCEO(sus)=80Vdc(Win)—BD789,BD790=100Vdc(Min)—BD791,BD792 •HighDCCurrentGain@IQ=200mAdchpE=40-250 •LowCollector-EmitterSatura

BD789

ComplementaryPlasticSiliconPowerTransistors

ComplementaryPlasticSiliconPowerTransistors ...designedforlowpoweraudioamplifierandlow–current,highspeedswitchingapplications. •HighCollector–EmitterSustainingVoltage— VCEO(sus)=80Vdc(Min)—BD789,BD790 =100Vdc(Min)—BD791,BD792 •Hi

FCX789A

PNPSILICONPOWER(SWITCHING)TRANSISTOR

FEATURES *2WPOWERDISSIPATION *8APeakPulseCurrent *ExcellentHFECharacteristicsupto10Amps *LowSaturationVoltageE.g.10mvTyp.

FCX789A

SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR

Features •BVCEO>-25V •IC=-3AhighContinuousCurrent •ICM=-8APeakPulseCurrent •LowsaturationvoltageVCE(sat)

FCX789A

PNPSiliconPowerSwitchingTransistor

Features ●2Wpowerdissipation. ●8Apeakpulsecurrent. ●ExcellentHFEcharacteristicsupto10Amps. ●ExtremelylowsaturationvoltageE.g.10mvTyp.