DRA751BLGABCQ

DRA75x,DRA74xInfotainmentApplicationsProcessorSiliconRevision2.0

DSO751S

SMDCrystalOscillators

DSO751SA

SMDCrystalOscillators

DSO751SB

SMDCrystalOscillators

DSP-751N

DIASURGESUPPRESSOR(DSS)

■Features ●Surgeprotectionfortelephonelines.(telephone,modem,facsimileetc.) ●Surgeprotectionfortelecommunicationlines.(computeretc.) ●SomemodelsarerecognizedbyUL.

DXT751

LOWVCE(SAT)PNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable(DXT651) •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DXT751Q

60VPNPLOWSATURATIONPOWERTRANSISTOR

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofautomotiveapplications. Features •BVCEO>-60V •IC=-3AHighContinuousCollectorCurrent •ICMupto-6APeakPulseCurrent •2WPowerDissipation •ComplementaryPNPType:DXT651Q •T

DZT751

LOWVCEPNPSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable(DZT651) •IdeallySuitedforAutomatedAssemblyProcesses •IdealforMediumPowerSwitchingorAmplificationApplications •LeadFreeByDesign/RoHSCompliant(Note1) •“Green”Device(Note2)

E751NEO

NeodymiumMagnets

DeepPots ■■Higheststrengthmagnetmaterialavailable ■■Cylindricalmagnetsinabrasspot.Steelpolepieces ■■Potisanessentialpartofthemagneticcircuit ■■Bothpolesareononefaceprovidingsuperiorgripatcontact ■■Suitableforgrippingandliftingapplications ■■Idealfor

ESD751

ESD751andESD76124-V1-ChannelESDProtectionDiodes

1Features •IEC61000-4-2level4ESDprotection: –±22-kVor±15-kVcontactdischarge –±22-kVor±15-kVair-gapdischarge •Robustsurgeprotection: –IEC61000-4-5(8/20μs):2.8Aor1.8A •24-Vworkingvoltage •BidirectionalESDprotection •Lowclampingvoltageprotectsdownstream