首页 >CTNS-4306SIGBT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
PlasticfastRecoverRectifier | DACHANGRugao Dachang Electronics Co., Ltd 大昌电子如皋市大昌电子有限公司 | DACHANG | ||
PlasticfastRecoverRectifierReverseVoltage200to800VForwardCurrent0.5A Features •Lowreverseleakage •Highforwardsurgecapability •Hightemperaturesolderingguaranteed:260℃/10seconds,0.375(9.5mm)leadlength.5lbs.(2.3kg)tension •LeadandbodyaccordingwithRoHSstandard MechanicalData •Terminals:Platedaxialleads •Polarity:Colorbanddeno | DACHANGRugao Dachang Electronics Co., Ltd 大昌电子如皋市大昌电子有限公司 | DACHANG | ||
HCMOS,7.5x5mm,2.85VSMDOscillator | FOX Fox Electronics | FOX | ||
HCMOS,7.5x5mm,2.85VSMDOscillator | FOX Fox Electronics | FOX | ||
PNPEpitaxialSiliconTransistor SwitchingApplication(BiasResistorBuiltIn) •Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit •BuiltinbiasResistor(R1=10KΩ,R2=47KΩ) •ComplementtoFJN3306R | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SiliconDiode Description TheFMN-4306Sisafastrecoverydiodeof600V/30A.Themaximumtrrof100nsisrealizedbyoptimizingalife-timecontrol. Features ●VRM------------------------------------------------------600V ●IF(AV)-------------------------------------------------------30A ●VF----- | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
SiliconSchottkyBarrierDiode Description TheFMW-4306isa60V,30ASchottkydiodewithallowingimprovementsinVFcharacteristic.Thesecharacteristicfeaturescontributetoimprovingpowersupplyefficiencyandtoenablinghigh-frequencysystems. Features ●VRSM------------------------------------------------------6 | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
SiliconSchottkyBarrierDiode | SankenSanken electric 三垦三垦电气株式会社 | Sanken | ||
N-ChannelEnhancementModeMOSFET | HUAYIHUAYI MICROELECTRONICS CO.,LTD. 华羿微电华羿微电子股份有限公司 | HUAYI |
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