首页 >CT1129D>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

DCMO1129

VOLTAGECONTROLLEDOSCILLATOR

SYNERGY

Synergy Microwave Corporation

EPR1129

ISDNUInterfaceTransformers

PCA

PCA ELECTRONICS INC.

F1129HB

50ΩSE-In–100ΩDIFF-OutAmplifier3.0GHzto4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

F1129LB

50ΩSE-In–100ΩDIFF-OutAmplifier3.0GHzto4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

F1129MB

50ΩSE-In–100ΩDIFF-OutAmplifier3.0GHzto4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

F1129MBEVB

50ΩSE-In–100ΩDIFF-OutAmplifier3.0GHzto4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

F1129MBNELI

50ΩSE-In–100ΩDIFF-OutAmplifier3.0GHzto4.2GHz

Features RFrange:3.0GHzto4.2GHz Gain=19dBat3.55GHz Noisefigure=1.8dBat3.55GHz OIP3=+32dBmat3.55GHz OutputP1dB=+18dBmat3.55GHz Gainvariationovertemperature=±0.15dBtypical 50Ωsingle-endedinputimpedances 100Ωdifferentialoutputimpedances 3.3Vor5Vp

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

GP1129

U.S.ELECTRICALDIVISIONMANCHESTER,NH03108

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

HAT1129R

P-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

HTT1129E

SiliconNPNEpitaxialTwinTransistor

Features •Include2transistorsinasmallsizeSMDpackage:EMFPAK–6(6Leads:1.2x0.8x0.5mm)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格