首页 >CSV10C30>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HighSurgeCapacity | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
10.0AmpereSurfaceMountDualCommonCathodeUltraFastRecoveryRectifiers Features ※ThinkiSemilatest&maturedprocessFRD/FRED ※Lowforwardvoltagedrop ※Highcurrentcapability ※Lowreverseleakagecurrent ※Highsurgecurrentcapability Application ※AutomotiveInvertersandSolarInverters ※CarAudioAmplifiersandSoundDeviceSystems ※PlatingPowerS | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 | THINKISEMI | ||
SCHOTTKYBARRIERRECTIFIERS(10A,30-60V) SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingan | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
SCHOTTKYBARRIERRECTIFIERS(10A,30-60V) SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingan | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
SCHOTTKYBARRIERRECTIFIERS(10A,30-60V) SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingan | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
SchottkyBarrierRectifiers SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheeling | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
SCHOTTKYBARRIERRECTIFIERS(10A,30-60V) SchottkyBarrierRectifiers UsingtheSchottkyBarrierprinciplewithaMolybdenumbarriermetal.Thesestate-of-the-artgeometryfeaturesepitaxialconstructionwithoxidepassivationandmetaloverlaycontact.Ideallysuitedforlowvoltage,highfrequencyrectification,orasfreewheelingan | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC | ||
SCHOTTKYBARRIERRECTIFIER | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
10A/300VSchottkySiliconCarbide | SSDI Solid States Devices, Inc | SSDI | ||
SwitchmodeDualUltrafastPowerRectifiers | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC |
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