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BA591WS

BANDSWITCHINGDIODE

Features •VerysmallplasticSMDpackage •Lowdiodecapacitance •Lowdiodeforwardresistance •Smallinductance

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

BF591

NPNhigh-voltagetransistors

DESCRIPTION NPNhigh-voltagetransistorinaTO-202;SOT128Bplasticpackage. FEATURES •Lowcurrent(max.150mA) •Highvoltage(max.210V). APPLICATIONS •Telephonesystems.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG591

NPN7GHzwidebandtransistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorinaplastic,4-pinSOT223package. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS IntendedforapplicationsintheGHzrange

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG591

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFQ591

NPN7GHzwidebandtransistor

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFQ591

SiliconNPNRFTransistor

DESCRIPTION •HighPowerGain •HighCurrentGainBandwidthProduct •LowNoiseFigure APPLICATIONS •DesignedforuseinMATVorCATVamplifiersandRF communicationssubscribersequipment.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BFQ591

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFQ591

NPN7GHzwidebandtransistor

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFQ591

iscSiliconNPNRFTransistor

DESCRIPTION •HighPowerGain •HighCurrentGainBandwidthProduct •LowNoiseFigure APPLICATIONS •DesignedforuseinMATVorCATVamplifiersandRF communicationssubscribersequipment.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

BFQ591

NPN7GHzwidebandtransistor

DESCRIPTION NPNwidebandtransistorinaSOT89plasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS IntendedforapplicationsintheGHzrangesuchasMATV orCATVamplifiersandR

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

C591

250WATTS(AC)DC/DCSINGLEOUTPUT

250WATTS(AC)DC/DCSINGLEOUTPUT Features •SingleOutput •3Ux21(24)TEx166.5mm(24TEfor5Voutputs) •Weight1.7kg

POWERBOX

Powerbox manufactures

CL-591S

LEDForFlashLightSource

LEDForFlashLightSource ●Highoutputtypewithreflectorequipped.

CITIZEN

Citizen Electronics Co., Ltd

CMLT591E

PNPLowVCE(Sat)1.0Amptransistor

DESCRIPTION: TheCENTRALSEMICONDUCTORCMLT591EisaPNPLowVCE(SAT)1.0Amptransistor,epoxymoldedinaspacesavingSOT-563surfacemountpackageanddesignedforapplicationsrequiringahighcurrentcapabilityandlowsaturationvoltages. MARKINGCODE:L59

CentralCentral Semiconductor Corp

美国中央半导体

CMMT591

SILICONPLANAREPITAXIALTRANSISTORS

SILICONPLANAREPITAXIALTRANSISTORS PNPtransistor

CDIL

CDIL

CMMT591

SOT-23-PowerTransistorandDarlingtons

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

CMMT591A

PNPEPITAXIALPLANARSILICONTRANSISTOR

PNPEPITAXIALPLANARSILICONTRANSISTOR ComplementaryCMMT491A

CDIL

CDIL

CMPT591

SURFACEMOUNTPNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT591EtypeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrent,generalpurposeamplifierapplications. MarkingCodeisC59.

CentralCentral Semiconductor Corp

美国中央半导体

CMPT591E

SURFACEMOUNTPNPSILICONTRANSISTOR

DESCRIPTION: TheCENTRALSEMICONDUCTORCMPT591EtypeisaPNPsilicontransistormanufacturedbytheepitaxialplanarprocess,epoxymoldedinasurfacemountpackage,designedforhighcurrent,generalpurposeamplifierapplications. MarkingCodeisC59.

CentralCentral Semiconductor Corp

美国中央半导体

CP591

SmallSignalTransistorPNP-Amp/SwitchTransistorChip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness9.0MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl-

CentralCentral Semiconductor Corp

美国中央半导体

CP591V

SmallSignalTransistorPNP-Amp/SwitchTransistorChip

PROCESSDETAILS ProcessEPITAXIALPLANAR DieSize19x19MILS DieThickness7.1MILS BaseBondingPadArea3.5x4.3MILS EmitterBondingPadArea3.5x4.5MILS TopSideMetalizationAl

CentralCentral Semiconductor Corp

美国中央半导体

详细参数

  • 型号:

    CSNJ591

  • 制造商:

    HONEYWELL

  • 制造商全称:

    Honeywell Solid State Electronics Center

  • 功能描述:

    Solid State Sensors Closed Loop Current Sensors

供应商型号品牌批号封装库存备注价格
HONEYWELL
13+
DIP
1690
原装分销
询价
Honeywell
17+
原厂原装
6000
进口原装正品假一赔十,货期7-10天
询价
HONEYWELL
23+
SENSOR
5000
原装正品,假一罚十
询价
Honeywell
5
全新原装 货期两周
询价
23+
N/A
48700
正品授权货源可靠
询价
HONEYWELL/霍尼韦尔
1923+
SIP
3091
全新支持实单!Honeywell电流传感器 CSNK500M
询价
HONEYWELL/霍尼韦尔
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
HONEYWELL/霍尼韦尔
22+
原厂原封
4875
只做原装 提供一站式配套供货 中利达
询价
Honeywell
2022+
1
全新原装 货期两周
询价
HONEYWELL
16+
MODULE
2100
公司大量全新现货 随时可以发货
询价
更多CSNJ591供应商 更新时间2024-5-16 9:00:00