ESD451

ESD4511-Channel±30kVBidirectionalESDDiodeinan0201Package

1Features •IEC61000-4-2level4ESDprotection –±30kVcontactdischarge –±30kVairgapdischarge •IEC61000-4-5surgeprotection –4.4A(8/20μs) •IOcapacitance: –0.5pF(typical) •DCbreakdownvoltage:±8V(typical) •Ultralowleakagecurrent:50nA(maximum) •Extremely

ESD451DPLR

ESD4511-Channel±30kVBidirectionalESDDiodeinan0201Package

1Features •IEC61000-4-2level4ESDprotection: –±30kVcontactdischarge –±30kVairgapdischarge •IEC61000-4-5surgeprotection: –6.2A(8/20μs) •IOcapacitance: –0.5pF(typical) •DCbreakdownvoltage:±8V(typical) •Ultralowleakagecurrent:50nA(maximum) •Extremel

ESMQ451VSN

Downsizedsnap-ins,85

EW451

1/8WATTMETAL

F451

3ABSlo-BloFuse325/326Series

F451-ND

3ABSlo-BloFuse325/326Series

FMMT451

NPNSILICONPLANARHIGHPERFROMANCETRANSISTOR

FEATURES *Lowequivalenton-resistance;RCE(sat)400mΩat1A *1Ampcontinuouscurrent *Ptot=500mW

FMMT451

HighPerfromanceTransistor

Features ●Lowequivalenton-resistance. ●1Ampcontinuouscurrent. ●Ptot=500mW.

FMMT451

SOT23NPNSILICONPLANARHIGHPERFROMANCETRANSISTOR

Features •BVCEO>60V •IC=1AContinuousCollectorCurrent •ICM=2APeakPulseCurrent •500mWPowerDissipation •ComplementaryPNPType:FMMT551 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •QualifiedtoAEC-Q

FMMT451TA

SOT23NPNSILICONPLANARHIGHPERFROMANCETRANSISTOR