FCX591ATA

40VPNPSILICONPLANARMEDIUMPOWERTRANSISTORINSOT89

Features •V(BR)CEO>-40V •HighcurrentcapabilityIC=-1A •LowsaturationvoltageVCE(sat)

FCX591TA

SOT89PNPSILICONPLANARMEDIUMPOWERHIGHPERFORMANCETRANSISTOR

FMMT591

PNPSILICONPLANARMEDIUMPOWERTRANSISTOR

FEATURES *LowEquivalentonresistanceRCE(sat)=355mΩat1A* COMPLEMENTARYTYPE-FMMT491 PARTMARKINGDETAIL-591

FMMT591

PNPSiliconEpitaxialPlanarTransistor

FEATURES ●Highsaturationvoltage. ●ComplementaryToFMMT491. ●ExcellentHFELinearity. APPLICATIONS ●Switchingappilication.

FMMT591

MediumPowerTransistor

Features ●Lowequivalenton-resistance.

FMMT591

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistorPNPSilicon P/bLead(Pb)-Free

FMMT591

MediumpowerPNPtransistorinSOT23

Features •BVCEO>-60V •IC=-1AHighContinuousCollectorCurrent •ICM=-2APeakPulseCurrent •Rsat=295mΩforaLowEquivalentOn-Resistance •hFEcharacterisedupto-2AforHighCurrentGainHoldUp •ComplementaryNPNType:FMMT491 •TotallyLead-Free&FullyRoHSCompliant

FMMT591

PNPPlastic-EncapsulateTransistor

Features •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation) MaximumRatings@25°CUnlessOtherwiseSpecified

FMMT591

TRANSISTOR(PNP)

FEATURES Lowequivalenton-resistance

FMMT591

SOT-23BIPOLARTRANSISTORSTRANSISTOR(PNP)