| 订购数量 | 价格 |
|---|---|
| 1+ |
CSD83325L_TI/德州仪器_12 V Dual N-Channel NexFET??Power MOSFET新冠美科技
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产品属性
- 类型
描述
- 制造商编号
:CSD83325L
- 生产厂家
:德州仪器
- Configuration
:Dual Common Drain
- Rds(on) max at VGS=4.5 V (mOhms)
:5.9
- IDM - pulsed drain current (Max) (A)
:52
- QG typ (nC)
:8.4
- QGD typ (nC)
:1.9
- Package (mm)
:LGA 2.2x1.2mm
- VGS (V)
:10
- VGSTH typ (V)
:0.95
- ID - silicon limited at Tc=25degC (A)
:8
- ID - package limited (A)
:8
- Logic level
:Yes
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