CSD25501F3T.B中文资料德州仪器数据手册PDF规格书

1 Features

• Low on-resistance

• Ultra-low Qg and Qgd

• Ultra-small footprint

– 0.7mm × 0.6mm

• Low profile

– 0.22mm max height

• Integrated ESD protection diode

• Lead and halogen free

• RoHS compliant

2 Applications

• Optimized for load switch applications

• Battery applications

• Handheld and mobile applications

3 Description

This –20V, 64mΩ, P-Channel FemtoFET™ MOSFET

is designed and optimized to minimize the footprint

in many handheld and mobile applications. This

technology is capable of replacing standard small

signal MOSFETs while providing a substantial

reduction in footprint size. The integrated 10kΩ clamp

resistor (RC) allows the gate voltage (VGS) to be

operated above the maximum internal gate oxide

value of –6V, depending on duty cycle. The gate

leakage (IGSS) through the diode increases as VGS is

increased above –6V.