CSD25501F3.B中文资料德州仪器数据手册PDF规格书

厂商型号	CSD25501F3.B
功能描述	CSD25501F3 –20V P-Channel FemtoFET™ MOSFET
文件大小	1.08349 Mbytes
页面数量	12 页
生产厂商	TI
中文名称	德州仪器
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-12-12 18:06:00
人工找货	CSD25501F3.B价格和库存，欢迎联系客服免费人工找货

1 Features

• Low on-resistance

• Ultra-low Qg and Qgd

• Ultra-small footprint

– 0.7mm × 0.6mm

• Low profile

– 0.22mm max height

• Integrated ESD protection diode

• Lead and halogen free

• RoHS compliant

2 Applications

• Optimized for load switch applications

• Battery applications

• Handheld and mobile applications

3 Description

This –20V, 64mΩ, P-Channel FemtoFET™ MOSFET

is designed and optimized to minimize the footprint

in many handheld and mobile applications. This

technology is capable of replacing standard small

signal MOSFETs while providing a substantial

reduction in footprint size. The integrated 10kΩ clamp

resistor (RC) allows the gate voltage (VGS) to be

operated above the maximum internal gate oxide

value of –6V, depending on duty cycle. The gate

leakage (IGSS) through the diode increases as VGS is

increased above –6V.