首页 >CSC3414A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •25mΩ@VGS=4.5V •29mΩ@VGS=2.5V •37mΩ@VGS=1.8V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Quali | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •25mΩ@VGS=4.5V •29mΩ@VGS=2.5V •37mΩ@VGS=1.8V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh | TYSEMITY Semiconductor Co., Ltd 台湾TY半导体台湾TY半导体有限公司 | TYSEMI | ||
N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •25mΩ@VGS=4.5V •29mΩ@VGS=2.5V •37mΩ@VGS=1.8V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
N-CHANNELENHANCEMENTMODEMOSFET Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •LowOn-Resistance •LowInputCapacitance •FastSwitchingSpeed •LowInput/Output | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
LowPassFilters | RHOMBUS-IND Rhombus Industries Inc. | RHOMBUS-IND | ||
N-ChannelEnhancementMode Features •VDS(V)=20V •ID=4.2A(VGS=4.5V) •RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
Plug-inSignalConditionersK-UNIT | MSYSTEMM-System Co.,Ltd. 爱模爱模系统有限公司 | MSYSTEM | ||
Plug-inSignalConditionersK-UNIT | MSYSTEMM-System Co.,Ltd. 爱模爱模系统有限公司 | MSYSTEM | ||
Plug-inSignalConditionersK-UNIT | MSYSTEMM-System Co.,Ltd. 爱模爱模系统有限公司 | MSYSTEM |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
