N 沟道 MOS 晶体管

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N-Channel MOSFET

文件：453.42 Kbytes 页数：8 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.09mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：332.92 Kbytes 页数：2 Pages

ISC

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N-Channel Enhancement Mode Power MOSFET

文件：570.21 Kbytes 页数：7 Pages

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