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FDS6614A

N-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductorsadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •9.3A,30V.RDS(ON)=0.018Ω@V

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FTLX6614MCC

800ps/nm(40km)TunableXFPOpticalTransceiver

Finisar

Finisar Corporation.

FTLX6614MCC-XX

800ps/nm(40km)TunableXFPOpticalTransceiver

Finisar

Finisar Corporation.

FTLX6614MCC-XX

800ps/nm(40km)TunableXFPOpticalTransceiver

Finisar

Finisar Corporation.

IRF6614

DirectFETPowerMOSFET

Description TheIRF6614combinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout

IRF

International Rectifier

IRF6614PBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6614PBF

DirectFETPowerMOSFET

Description TheIRF6614PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistingla

IRF

International Rectifier

IRF6614TRPBF

BenchmarkMOSFETsProductSelectionGuide

IRF

International Rectifier

IRF6614TRPBF

IdealforCPUCoreDC-DCConverters

IRF

International Rectifier

IRF6614TRPBF

DirectFETPowerMOSFET

Description TheIRF6614PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaMICRO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistingla

IRF

International Rectifier

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