Silicon N-Channel Power MOSFET

General Description： CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for sys

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HUAJING-MICRO

华润微电子

High Voltage Power Supplies

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TDK

东电化

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 50 A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 60mΩ(Max)@VGS= 10V DESCRIPTION ·DC/DC Converter ·Ldeal for high-frequency switching and synchronous rectification

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ISC

无锡固电

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

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IXYS

艾赛斯