丝印：H50N20HT；Package：TO-220；200V SGT N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Managment • Load Switch

文件：647.83 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

200V SGT N-Channel MOSFET

Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability • Enhanced Avalanche Ruggedness • Lead Free Applications: • Synchronous Rectification in SMPS • Hard Switching and High Speed Circuit • Power Tools • UPS • Motor Control

文件：624.31 Kbytes 页数：6 Pages

HUIXIN

慧芯电子

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 50 A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 60mΩ(Max)@VGS= 10V DESCRIPTION ·DC/DC Converter ·Ldeal for high-frequency switching and synchronous rectification

文件：614.28 Kbytes 页数：6 Pages

ISC

无锡固电

HiPerFET Power MOSFETs

HiPerFETs The hIPerFET family of Power MOSFETs is designed to provice superior dv/dt, performance while eliminating the need for discrete, fase recovery free wheeling rectifiers In a board range of power switching applications.

文件：104.03 Kbytes 页数：4 Pages

IXYS

艾赛斯