CS50N20ANH中文资料华润微电子数据手册PDF规格书

General Description：

CS50N20 ANH, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-3P（N）, which accords with the RoHS standard..

Features：

l Fast Switching

l Low ON Resistance(Rdson≤0.045Ω)

l Low Gate Charge (Typical Data:150nC)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of electron ballast and adaptor.