FDT4N50NZU

MOSFET-Power,N-Channel,UniFETII,UltraFRFET500V,2A,3

Description UniFETIIMOSFETisONSemiconductor’shighvoltage MOSFETfamilybasedonadvancedplanarstripeandDMOS technology.ThisadvancedMOSFETfamilyhasthesmalleston−state resistanceamongtheplanarMOSFET,andalsoprovidessuperior switchingperformanceandhigheravalancheen

FQB4N50

500VN-ChannelMOSFET

Features •3.4A,500V,RDS(on)=2.7Ω@VGS=10V •Lowgatecharge(typical10nC) •LowCrss(typical6.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQD4N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.6A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQD4N50

500VN-ChannelMOSFET

FQD4N50

500VN-ChannelMOSFET

FQI4N50

500VN-ChannelMOSFET

Features •3.4A,500V,RDS(on)=2.7Ω@VGS=10V •Lowgatecharge(typical10nC) •LowCrss(typical6.0pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQP4N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.4A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQP4N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FQPF4N50

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproductusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FQU4N50

500VN-ChannelMOSFET