首页 >CS4213D-CNZR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CSC4213 | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
ConstantCurrentN-ChannelMOSFETLinearLEDController | E-CMOSE-CMOS Corporation 飞虹高科飞虹高科股份有限公司 | E-CMOS | ||
AudioPowerAmplifier Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsarea | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPEpitaxialSiliconTransistor Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsarea | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPEpitaxialSiliconTransistor Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsare | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PNPEpitaxialSiliconTransistor Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsarea | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPEpitaxialSiliconTransistor Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsare | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PNPEpitaxialSiliconTransistor Features •HighCurrentCapability:IC=-17A •HighPowerDissipation:130watts •HighFrequency:30MHz. •HighVoltage:VCEO=-250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SC5242/FJA4313. •ThermalandelectricalSpicemodelsarea | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPEpitaxialSiliconTransistor SwitchingApplication(BiasResistorBuiltIn) •Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit •BuiltinbiasResistor(R1=2.2KΩ,R2=47KΩ) •ComplementtoFJNS3213R | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HIGHSPEEDPINDIODES DESCRIPTION TheGC4200seriesarehighspeed(cathodebase)PINdiodesmadewithhighresistivityepitaxialsiliconmaterial.Thesediodesarepassivatedwithsilicondioxideforhighstabilityandreliabilityandhavebeenprovenbythousandsofdevicehoursinhighreliabilitysystems. APPLICA | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
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