零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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400VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
400VN-ChannelMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
400VN-ChannelMOSFET
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TO252-3L,JEDECOPTIONAA,PACKINGCONFIGURATIONFigure1.0 | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
400VN-ChannelMOSFET
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
400VN-ChannelMOSFET Features •1.6A,400V,RDS(on)=3.4Ω@VGS=10V •Lowgatecharge(typical6.0nC) •LowCrss(typical4.2pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2.0A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
I-PAKTubePackingConfiguration | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
400VN-ChannelMOSFETs | FS First Silicon Co., Ltd | FS | ||
400VN-ChannelMOSFETs | FS First Silicon Co., Ltd | FS | ||
400VN-ChannelMOSFETs | FS First Silicon Co., Ltd | FS | ||
SiliconN-ChannelPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
SiliconN-ChannelPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES •VDSS(Min.)=400V,ID=2.2A •D | KECKEC CORPORATION KEC株式会社 | KEC | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES •VDSS(Min.)=400V,ID=2.2A •D | KECKEC CORPORATION KEC株式会社 | KEC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
华晶 |
21+ |
TO251 |
16500 |
进口原装正品现货 |
询价 | ||
HUAJING |
22+ |
SOT-223 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
华润华晶 |
2112+ |
TO-251(I-PAK) |
105000 |
75个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
HUAJING |
SOT-223 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
华晶 |
22+ |
TO-252 |
90000 |
电源芯片MOS驱动IC |
询价 | ||
华晶微 |
23+ |
SOT223 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
华润华晶 |
2020+ |
TO-251(I-PAK) |
59580 |
全新原装现货 样品可售 |
询价 | ||
华晶微 |
22+ |
SOT223 |
37440 |
只做原装低价甩卖假一罚万 |
询价 | ||
华晶 |
21+ROHS |
TO-252 |
690000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
华润华晶 |
23+ |
TO-251(I-PAK) |
22820 |
原装正品,支持实单 |
询价 |
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