DMG3414U

N-CHANNELENHANCEMENTMODEMOSFET

Features •LowOn-Resistance •25mΩ@VGS=4.5V •29mΩ@VGS=2.5V •37mΩ@VGS=1.8V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Quali

DMG3414U

N-CHANNELENHANCEMENTMODEMOSFET

Features •LowOn-Resistance •25mΩ@VGS=4.5V •29mΩ@VGS=2.5V •37mΩ@VGS=1.8V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh

DMG3414U

N-CHANNELENHANCEMENTMODEMOSFET

Features •LowOn-Resistance •25mΩ@VGS=4.5V •29mΩ@VGS=2.5V •37mΩ@VGS=1.8V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) •QualifiedtoAEC-Q101StandardsforHigh

DMG3414UQ

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •LowOn-Resistance •LowInputCapacitance •FastSwitchingSpeed •LowInput/Output

F-3414

LowPassFilters

KO3414

N-ChannelEnhancementMode

Features •VDS(V)=20V •ID=4.2A(VGS=4.5V) •RDS(ON)

KSM3414

AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON)

KUWTN-3414

Plug-inSignalConditionersK-UNIT

KUWTN-3414/Q

Plug-inSignalConditionersK-UNIT

KUWTN-3414SLASHQ

Plug-inSignalConditionersK-UNIT