首页 >CS3208B>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNEpitaxialSiliconTransistor SwitchingApplication(BiasResistorBuiltIn) •Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit •BuiltinbiasResistor(R1=47KΩ,R2=22KΩ) •ComplementtoFJNS4208R | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DualN-Ch30VFastSwitchingMOSFETs Description TheFKQ3208isthehighcelldensitytrenched N-chMOSFETs,whichprovidesexcellentRDSON andefficiencyformostofthesmallpower switchingandloadswitchapplications. TheFKQ3208meettheRoHSandGreenProduct requirementwithfullfunctionreliabilityapproved. | FETEKFETek Technology Corp. 台湾东沅东沅科技股份有限公司 | FETEK | ||
DualN-Ch30VFastSwitchingMOSFETs Description TheFKS3208isthehighcelldensitytrenched N-chMOSFETs,whichprovideexcellentRDSON andgatechargeformostofthesynchronousbuck converterapplications. TheFKS3208meettheRoHSandGreenProduct requirementwithfullfunctionreliabilityapproved. | FETEKFETek Technology Corp. 台湾东沅东沅科技股份有限公司 | FETEK | ||
Dual0.75SPDTAnalogSwitch | GMTGlobal Mixed-mode Technology Inc 致新科技 | GMT | ||
POWERGENERATIONHarmonicsGeneratorVaractors | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
UltraSmallProfilePackageIrDADataCompliantLowPower115.2kbit/sInfraredTransceiver | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
UltraSmallProfilePackageIrDA짰DataCompliantLowPower115.2kbit/sInfraredTransceiver Description TheHSDL-3208isanultra-smalllowcostinfraredtransceivermodulethatprovidestheinterfacebetweenlogicandinfrared(IR)signalsforthroughair,serial,half-duplexIRdatalink.ThemoduleiscomplianttoIrDAPhysicalLayerSpecificationsversion1.4LowPowerfrom9.6kbit | LITEONLite-On Technology Corporation 光宝科技光宝科技股份有限公司 | LITEON | ||
N-ChannelEnhancementModeMOSFET Features 80V/120A RDS(ON)=mW(typ.)@VGS=10V ·ReliableandRugged ·LeadFreeandGreenDevicesAvailable (RoHSCompliant) 100%avalanchetested 7.0 Applications ·PowerManagementforInverterSystems. | HOOYIHOOYI SEMICONDUCTOR 后羿半导体西安后羿半导体科技有限公司 | HOOYI | ||
N-ChannelEnhancementModeMOSFET Features 80V/120A RDS(ON)=mW(typ.)@VGS=10V ·ReliableandRugged ·LeadFreeandGreenDevicesAvailable (RoHSCompliant) 100%avalanchetested 7.0 Applications ·PowerManagementforInverterSystems. | HOOYIHOOYI SEMICONDUCTOR 后羿半导体西安后羿半导体科技有限公司 | HOOYI | ||
N-ChannelEnhancementModeMOSFET Features 80V/120A RDS(ON)=mW(typ.)@VGS=10V ·ReliableandRugged ·LeadFreeandGreenDevicesAvailable (RoHSCompliant) 100%avalanchetested 7.0 Applications ·PowerManagementforInverterSystems. | HOOYIHOOYI SEMICONDUCTOR 后羿半导体西安后羿半导体科技有限公司 | HOOYI |
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