首页 >CS2933BLT>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HighReliabilitySP2TRFSwitch50MHzto8000MHz | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
HighReliabilitySP2TRFSwitch | IDT Integrated Device Technology, Inc. | IDT | ||
HighReliabilitySP2TRFSwitch50MHzto8000MHz | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
High-precisionnon-isolatedstep-downswitch | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
High-precisionnon-isolatedstep-downswitch | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
HighReliabilitySP2TRFSwitch50MHzto8000MHz | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProgrammableHexVoltageSupervisorFeaturing | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
MOSFETN-Channel,EnhancementModeHighSpeedSwitch Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerRDS(on):0.437ΩTyp ●LowerLeakageCurrent:10µA(Max)@VDS=400V | NTE NTE Electronics | NTE | ||
AtomicMAPSensor | MALLORYMallory Sonalert Products Inc. 马洛里 | MALLORY | ||
2.9–3.3GHz60WGaNPowerAmplifier KeyFeatures •FrequencyRange:2.9–3.3GHz •PSAT(PIN=27dBm):48.8dBm •PAE(PIN=27dBm):62% •PowerGain(PIN=27dBm):21.8dB •Bias:VD=28V,IDQ=680mA •PackageDimensions:7.00x7.00x0.85mm Performanceistypicalacrossfrequency.Please referenceelectricalspe | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | QORVO |
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