首页 >CS12N60ANH>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SiliconN-ChannelPowerMOSFET Features： -FastSwitching -LowONResistance(Rdson≤0.75Ω) -LowGateCharge(TypicalData:40nC) -LowReversetransfercapacitances(Typical:10pF) -100SinglePulseavalancheenergyTest | HUAJING-MICROHUAJING MICROELECTRONICS 华润微电子华润微电子有限公司 | HUAJING-MICRO | ||
N-CHANNELENHANCEMENTMODEMOSFET GeneralDescription DG12N60isanN-channelenhancementmodeMOSFET,whichisproducedusingDongguangMicro-electronics’s proprietary.Theself-alignedplanarprocessandimprovedterminaltechnologyreducetheconductionloss,improve switchingperformanceandenhancetheavalancheenergy.Th | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
12A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | WXDH | ||
12A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | WXDH | ||
12A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | WXDH | ||
12A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | WXDH | ||
N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS600V RDSON(MAX.)0.75Ω ID12A UIS,100Tested Pb‐FreeLeadPlating&HalogenFree | EXCELLIANCEExcelliance MOS Corp. 杰力科技杰力科技股份有限公司 | EXCELLIANCE | ||
12A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | WXDH | ||
12A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | WXDH | ||
12A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体股份有限公司 | WXDH |
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