首页 >CS01N80>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Plastic-EncapsulateMOSFETS | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
N-ChannelPowerMOSFET | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
Plastic-EncapsulateMOSFETS | ZPSEMIZP Semiconductor 至尚臻品 | ZPSEMI | ||
HighVoltageMOSFET HighVoltageMOSFET N-Channel,EnhancementMode Features •InternationalstandardpackagesJEDECTO-251AA,TO-252AA •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Levelshifting •Triggers •Solidstaterelays •Currentre | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=0.1A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=50Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HighVoltageMOSFET HighVoltageMOSFET N-Channel,EnhancementMode Features •InternationalstandardpackagesJEDECTO-251AA,TO-252AA •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Levelshifting •Triggers •Solidstaterelays •Currentre | IXYS IXYS Corporation | IXYS |
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